IPI076N12N3 - Power-Transistor

This page provides the datasheet information for the IPI076N12N3, a member of the IPI076N12N3G Power-Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; halogen free.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPI076N12N3
Manufacturer	Infineon
File Size	487.17 KB
Description	Power-Transistor
Datasheet	IPI076N12N3 Datasheet
Additional preview pages of the IPI076N12N3 datasheet.

📁 Similar Datasheet

IPI076N12N3 - N-Channel MOSFET (INCHANGE)
IPI076N15N5 - N-Channel MOSFET (INCHANGE)
IPI070N08N3G - N-Channel MOSFET (INCHANGE)
IPI072N10N3 - N-Channel MOSFET (INCHANGE)
IPI075N15N3 - N-Channel MOSFET (INCHANGE)
IPI075N15N3G - Power Transistor (Infineon Technologies)
IPI020N06N - Power Transistor (Infineon Technologies)
IPI024N06N3G - Power-Transistor (Infineon Technologies)
IPI029N06N - Power Transistor (Infineon Technologies)
IPI030N10N3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPI076N12N3G - Power-Transistor
IPI076N15N5 - MOSFET
IPI070N08N3 - Power-Transistor
IPI070N08N3G - Power-Transistor
IPI072N10N3 - Power Transistor
IPI072N10N3G - Power Transistor
IPI075N15N3 - Power-Transistor
IPI023NE7N3G - Power-Transistor

Full PDF Text Transcription

Click to expand full text

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.

Published: Oct 2, 2020 |