IPB039N10N3 - Power Transistor

This page provides the datasheet information for the IPB039N10N3, a member of the IPB039N10N3G Power Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
High current capability.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB039N10N3
Manufacturer	Infineon
File Size	291.30 KB
Description	Power Transistor
Datasheet	IPB039N10N3 Datasheet
Additional preview pages of the IPB039N10N3 datasheet.

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Full PDF Text Transcription

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G IPB039N10N3 G Product Summary V DS R DS(on),max ID 100 V 3.

Published: Oct 2, 2020 |