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IPB017N06N3 - Power Transistor

This page provides the datasheet information for the IPB017N06N3, a member of the IPB017N06N3G Power Transistor family.

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB017N06N3
Manufacturer Infineon
File Size 319.78 KB
Description Power Transistor
Datasheet download datasheet IPB017N06N3 Datasheet
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Full PDF Text Transcription

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Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G Product Summary V DS R DS(on),max ID 60 V 1.
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