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IDC08D120T6M - Diode

General Description

Attention please!

Key Features

  • 1200V EMCON 4 technology.
  • soft, fast switching This chip is used for:.
  • low / medium power modules A.
  • low reverse recovery charge.
  • small temperature coefficient C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IDC08D120T6M Diode EMCON 4 Medium Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • low / medium power modules A • low reverse recovery charge • small temperature coefficient C Applications: • low / medium power drives Chip Type VR IF IDC08D120T6M 1200V 10A Die Size 2.20 x 3.41 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 2.20 x 3.41 7.50 / 3.55 mm2 1.246 x 2.