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IDC08S120E - Schottky Diode

General Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.

Key Features

  • Revolutionary Semiconductor Material Silicon Carbide.
  • Switching Behaviour Benchmark.
  • No Reverse Recovery / No Forward Recovery.
  • Temperature Independent Switching Behaviour www. DataSheet4U. net.
  • Qualified According to JEDEC1) Based on Target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IDC08S120E 1200V thinQ!TM SiC Schottky Diode Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A C Chip Type IDC08S120E VBR 1200V IF 7.5A Die Size 2.012 x 2.012 mm2 Package sawn on foil Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.012 x 2.012 1.476 x 1.476 4.