IDC05S120E
Features
:
Si C Schottky Diode
Applications:
- -
- - Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
Revolutionary Semiconductor Material Silicon Carbide
- Switching Behaviour Benchmark
- No Reverse Recovery / No Forward Recovery
- Temperature Independent Switching Behaviour
- Qualified According to JEDEC1) Based on Target Applications ..net
- C
Chip Type
VBR 1200V
IF 5A
Die Size 1.692 x 1.692 mm2
Package sawn on foil
Mechanical parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 1.692 x 1.692 1.156 x 1.156 2.86 362 100 2360 Photoimide 3200 nm Al Ni Ag
- system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, <...
