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IDC05S120E - Schottky Diode

General Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.

Key Features

  • TM IDC05S120E SiC Schottky Diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V thinQ! Features: TM IDC05S120E SiC Schottky Diode Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour • Qualified According to JEDEC1) Based on Target Applications www.DataSheet4U.net • C Chip Type IDC05S120E VBR 1200V IF 5A Die Size 1.692 x 1.692 mm2 Package sawn on foil Mechanical parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.692 x 1.692 1.156 x 1.156 2.