IDC04S60C
FEATURES
:
- -
- -
- - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications:
- SMPS, PFC, snubber
Chip Type
VBR 600V
IF 4A
Die Size 1.146 x 0.968 mm2
Package sawn on foil
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment
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1.146x 0.968 mm 0.909 x 0.731 1.11 / 0.74 355 75 0 3461 pcs Photoimide 3200 nm Al mm µm mm deg
Data Shee
1400 nm Ni Ag
- system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
. Edited by INFINEON Technologies, AIM PMD D CID...
