Datasheet4U Logo Datasheet4U.com

IDC10D120T6M - Diode

General Description

Attention please!

Key Features

  • 1200V EMCON 4 technology.
  • soft, fast switching This chip is used for:.
  • low / medium power modules A.
  • low reverse recovery charge.
  • small temperature coefficient C.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDC-2512 Surface Mount Inductors Vishay Siliconix
IDC-5020 High Current / Surface Mount Inductor Vishay Siliconix
IDC-7328 High Current / Surface Mount Inductor Vishay Siliconix
IDC04S60C 2nd generation thinQ! SiC Schottky Diode Infineon Technologies
IDC04S60CE Schottky Diode Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IDC10D120T8M Diode
IDC15D120T6M Diode
IDC15D120T8M Diode
IDC08D120T6M Diode
IDC08D120T8M Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IDC10D120T6M Diode EMCON 4 Medium Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • low / medium power modules A • low reverse recovery charge • small temperature coefficient C Applications: • low / medium power drives Chip Type VR IF IDC10D120T6M 1200V 15A Die Size 3.30 x 2.98 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 3.30 x 2.98 9.83 / 5.33 mm2 2.346 x 2.