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BSZ096N10LS5 - MOSFET

Description

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Features

  • Ideal for high frequency switching.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • N-channel, Logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSZ096N10LS5
Manufacturer Infineon
File Size 1.37 MB
Description MOSFET
Datasheet download datasheet BSZ096N10LS5 Datasheet
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BSZ096N10LS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhighfrequencyswitching •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,Logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.6 mΩ ID 40 A QOSS 30 nC QG(0VB4.5V) 12 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ096N10LS5 Package PG-TSDSON-8 FL Marking 096N10L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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