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BSZ0904NSI - n-Channel Power MOSFET

Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Features

  • Optimized SyncFET for high performance buck converters 100% avalanche tested N-channel Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSZ0904NSI
Manufacturer Infineon
File Size 1.45 MB
Description n-Channel Power MOSFET
Datasheet download datasheet BSZ0904NSI Datasheet
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n-Channel Power MOSFET OptiMOS™ BSZ0904NSI Data Sheet 2.0, 2011-03-29 Final Industrial & Multimarket Free Datasheet http://www.datasheet4u.com/ OptiMOS™ Power-MOSFET BSZ0904NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.
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