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BSZ0911LS - MOSFET

Description

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Features

  • Optimized for chargers and adapters (e. g. USB-PD, wireless charging).
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max, VGS=10V 7.0 mΩ RDS(on),max, VGS=4.5V 9.0 mΩ ID 40 A TSDSON-.

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Datasheet Details

Part number BSZ0911LS
Manufacturer Infineon
File Size 955.33 KB
Description MOSFET
Datasheet download datasheet BSZ0911LS Datasheet
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BSZ0911LS MOSFET OptiMOSTM5Power-MOSFET,30V Features •Optimizedforchargersandadapters(e.g.USB-PD,wirelesscharging) •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=10V 7.0 mΩ RDS(on),max,VGS=4.5V 9.0 mΩ ID 40 A TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ0911LS Package PG-TSDSON-8 FL Marking 0911LS RelatedLinks - Final Data Sheet 1 Rev.2.0,2020-05-11 OptiMOSTM5Power-MOSFET,30V BSZ0911LS TableofContents Description . . . . . . .
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