BSZ0902NSI - n-Channel Power MOSFET

Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Features

S2.
Optimized SyncFET for high performance buck converter 100% avalanche tested N-channel Very low on-resistance RDS(on) @ VGS=4.5 V Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSZ0902NSI
Manufacturer	Infineon
File Size	1.45 MB
Description	n-Channel Power MOSFET
Datasheet	BSZ0902NSI Datasheet
Additional preview pages of the BSZ0902NSI datasheet.

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Full PDF Text Transcription

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n-Channel Power MOSFET OptiMOS™ BSZ0902NSI Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket Free Datasheet http://www.datasheet4u.com/ OptiMOS™ Power-MOSFET BSZ0902NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.

Published: Dec 18, 2013 |