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SPU08P06P - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W.
  • www. DataSheet4U. com A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.DataSheet4U.com A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.