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Rev. 2.0
SPU01N60C3 SPD01N60C3
VDS @ Tjmax RDS(on) ID
P-TO252
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
650 6 0.8
V Ω A
P-TO251-3-1
Type SPU01N60C3 SPD01N60C3
Package P-TO251-3-1 P-TO252
Ordering Code Q67040-S4193 Q67040-S4188
Marking 01N60C3 01N60C3
Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.
SPU01N60C3 Datasheet
