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SPD04N60C2 SPU04N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity
P-TO251
Product Summary VDS RDS(on) ID 600 0.95 4.5
P-TO252
V Ω A
Type SPD04N60C2 SPU04N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4307 Q67040-S4306
Marking 04N60C2 04N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 4.5 2.8
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =3.6A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
9 130 0.4 4.5 6 ±20 50 -55...
SPU04N60C2 Datasheet
