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SPU04N60C3 - N-Channel MOSFET

Features

  • With To-251(IPAK) package.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • High peak current capability.
  • Improved transconductance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-251(IPAK) package ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPU04N60C3 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 4.5 2.8 13.5 PD Total Dissipation @TC=25℃ 50 Tch Max.
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