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Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPU02N60S5 SPD02N60S5
VDS RDS(on)
ID
PG-TO252
600 V
3
Ω
1.8 A
PG-TO251
2
3 1
3 2 1
Type SPU02N60S5 SPD02N60S5
Package PG-TO251 PG-TO252
Ordering Code Q67040-S4226 Q67040-S4213
Marking 02N60S5 02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 1.35 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 1.
SPU02N60S5 Datasheet
