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SPD07N60C2 SPU07N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low gate charge
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Product Summary VDS RDS(on) ID
P-TO251
600 0.6 7.3
P-TO252
V Ω A
• Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity
Type SPD07N60C2 SPU07N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4312 Q67040-S4311
Marking 07N60C2 07N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 7.3 4.6
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
14.
SPU07N60C2 Datasheet
