Datasheet4U Logo Datasheet4U.com

SPU08N10 - SIPMOS Power Transistor

Key Features

  • N channel.
  • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated.
  • Avalanche rated www. DataSheet4U. com.
  • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous.

📥 Download Datasheet

Datasheet Details

Part number SPU08N10
Manufacturer Infineon
File Size 159.24 KB
Description SIPMOS Power Transistor
Datasheet download datasheet SPU08N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPU01N60C3 Cool MOS Power Transistor Infineon
SPU01N60C3 N-Channel MOSFET INCHANGE
SPU02N60 SIPMO Power Transistor Siemens Semiconductor
SPU02N60C3 N-Channel MOSFET INCHANGE
SPU02N60S5 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
SPU08N05L SIPMOS-R POWER TRANSISTOR
SPU08P06P SIPMOS Power-Transistor
SPU02N60C3 Cool MOS Power Transistor
SPU02N60S5 Power Transistor
SPU03N60C3 Cool MOS Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.