IPD75N04S4-06 - Power-Transistor

Features

N-channel - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD75N04S4-06 Product Summary V DS R DS(on),max ID 40 V 5.9 mΩ 75 A PG-TO252-3-313 Type IPD75N04S4-06 Package Marking PG-TO252-3-313 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V.

Infineon Technologies

Datasheet Details

Part number	IPD75N04S4-06
Manufacturer	Infineon Technologies
File Size	151.76 KB
Description	Power-Transistor
Datasheet	IPD75N04S4-06 Datasheet
Additional preview pages of the IPD75N04S4-06 datasheet.

📁 Similar Datasheet

IPD70R1K4CE - MOSFET (Infineon)
IPD70R1K4CE - N-Channel MOSFET (INCHANGE)
IPD70R1K4P7S - MOSFET (Infineon)
IPD70R2K0CE - MOSFET (Infineon)
IPD70R2K0CE - N-Channel MOSFET (INCHANGE)
IPD70R360P7S - MOSFET (Infineon)
IPD70R600CE - MOSFET (Infineon)
IPD70R600CE - N-Channel MOSFET (INCHANGE)
IPD70R600P7S - 700V MOSFET (Infineon)
IPD70R900P7S - Power-Transistor (Infineon)

Other Datasheets by Infineon Technologies

IPD70N03S4L-04 - Power-Transistor
IPD70N04S3-07 - Power-Transistor
IPD70N10S3-12 - Power Transistor
IPD70N10S3L-12 - Power-Transistor
IPD70P04P4-09 - Power-Transistor
IPD70P04P4L-08 - Power-Transistor
IPD038N06N3G - Power-Transistor
IPD03N03LA - Power-Transistor

Full PDF Text Transcription

Click to expand full text

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD75N04S4-06 Product Summary V DS R DS(on),max ID 40 V 5.

Published: May 20, 2015 |