IPD70R1K4CE - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤1.4Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPD70R1K4CE
Manufacturer	Inchange Semiconductor
File Size	238.86 KB
Description	N-Channel MOSFET
Datasheet	IPD70R1K4CE Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.4 IDM Drain Current-Single Pulsed 8.3 PD Total Dissipation @TC=25℃ 53 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.

Published: Oct 8, 2020 |