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IPD70N03S4L-04 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested IPD70N03S4L-04 Product Summary V DS R DS(on),max ID 30 V 4.3 mΩ 70 A PG-TO252-3-11 Type IPD70N03S4L-04 Package Marking PG-TO252-3-11 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Con.

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Datasheet Details

Part number IPD70N03S4L-04
Manufacturer Infineon Technologies
File Size 183.80 KB
Description Power-Transistor
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPD70N03S4L-04 Product Summary V DS R DS(on),max ID 30 V 4.
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