IPD70N10S3-12 - Power Transistor

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

Infineon Technologies

Datasheet Details

Part number	IPD70N10S3-12
Manufacturer	Infineon Technologies
File Size	890.64 KB
Description	Power Transistor
Datasheet	IPD70N10S3-12 Datasheet
Additional preview pages of the IPD70N10S3-12 datasheet.

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Full PDF Text Transcription

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.

Published: May 20, 2015 |