Datasheet Details
| Part number | KTB688 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.58 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 KTB688 Datasheet
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| Part number | KTB688 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.58 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
KTB688 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTB688 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A ;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTB688 | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
|
KTB688B | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
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