Datasheet Details
| Part number | KTB1368 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.73 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 KTB1368 Datasheet
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| Part number | KTB1368 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.73 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
KTB1368 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type KTD2060 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.4 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTB1368 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTB1368 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
isc Silicon PNP Power Transistor.
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