Datasheet Details
| Part number | KTB1369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.26 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 KTB1369 Datasheet
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| Part number | KTB1369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.26 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
KTB1369 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type KTD2061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Voltage application ·TV, monitor vertical output application ·Driver stage application ·Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.2 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTB1369 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTB1369 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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