Datasheet Details
| Part number | KTB1367 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.96 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 KTB1367 Datasheet
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| Part number | KTB1367 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.96 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
KTB1367 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type KTD2059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTB1367 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTB1367 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTB1367 | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
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