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IXTX60N50L2 - Power MOSFET

Features

  • Designed for linear operation.
  • International standard packages.
  • Avalanche rated.
  • Guaranteed FBSOA at 75C Advantages.
  • Easy to mount.
  • Space savings.
  • High power density.

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Full PDF Text Transcription

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LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55...+150 150 -55...+150 A A A J W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.
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