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PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTK170P10P IXTX170P10P
VDSS = ID25 = ≤RDS(on)
-100V -170A 12mΩ
TO-264 (IXTK)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force (PLUS247) Mounting Forque (TO-264) PLUS247 TO-264
Maximum Ratings -100 -100
V V
±20 ±30
-170 -160 - 510
V V
A A A
-170
A
3.5 J
10 V/ns
890 W
-55 ... +150 150
-55 ... +150
300 260
20..120 / 4.5..27 1.13 / 10
6 10
°C °C °C
°C °C
N/lb. Nm/lb.
IXTX170P10P Datasheet
