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Preliminary Technical Information
X2-Class Power MOSFET
IXTK102N65X2 IXTX102N65X2
VDSS = ID25 =
RDS(on)
650V 102A 30m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-264P (IXTK)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
650 V 650 V
30 V 40 V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C
102 204
25 3
1040
50
-55 ... +150 150
-55 ... +150
A A
A J
W
V/ns
C C C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Torque (TO-264P) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.
IXTX102N65X2 Datasheet
