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IXTF1N450 - High Voltage Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4500V~ Electrical Isolation.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages.
  • High Voltage Package.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTF1N400 High Voltage Power MOSFET
IXTF02N450 High Voltage Power MOSFET
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IXTA02N450HV High Voltage Power MOSFETs

Full PDF Text Transcription

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 4500 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C 0.9 3.0 160 - 55 ... +150 150 - 55 ... +150 A A W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. 50/60Hz, 1 Minute 4500 V~ 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.
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