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High Voltage Power MOSFETs
Advance Technical Information
IXTA02N450HV IXTT02N450HV
VDSS I
D25
RDS(on)
= 4500V = 200mA ≤ 750Ω
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
Maximum Ratings
4500
V
4500
V
±20
V
±30
V
200
mA
600
mA
113
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds
300
°C
260
°C
Mounting Force (TO-263)
10..65 / 22..14.6
N/lb
TO-263 TO-268
2.5
g
4.