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IXTA08N100D2 - Power MOSFET

Download the IXTA08N100D2 datasheet PDF. This datasheet also covers the IXTY08N100D2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY08N100D2_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA08N100P N-Channel MOSFET INCHANGE
IXTA08N50D2 N-Channel MOSFET IXYS Corporation
IXTA05N100 Power MOSFET IXYS Corporation
IXTA05N100 N-Channel MOSFET INCHANGE
IXTA100N04T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA08N100D2HV High Voltage Depletion Mode Power MOSFET
IXTA08N100P Power MOSFET
IXTA02N250 High Voltage Power MOSFET
IXTA02N250HV High Voltage Power MOSFET
IXTA02N450HV High Voltage Power MOSFETs

Full PDF Text Transcription

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Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab) TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 60 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 25A 1000 V VGS(off) VDS = 25V, ID = 25A - 2.0 - 4.
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