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IXTF1N400 - High Voltage Power MOSFET

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 260 °C 20..120 / 4.5..27 N/lb. 4000 V~ 5g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 3.2kV, VGS = 0V VDS = 4.0kV VDS = 3.2kV Note 2, TJ = 100°C RDS(on) VGS = 10V, ID = 0.
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