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IXTF02N450 - High Voltage Power MOSFET

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4500V~ Electrical Isolation.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages.
  • High Voltage Package.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTF1N400 High Voltage Power MOSFET
IXTF1N450 High Voltage Power MOSFET
IXTA02N250 High Voltage Power MOSFET
IXTA02N250HV High Voltage Power MOSFET
IXTA02N450HV High Voltage Power MOSFETs

Full PDF Text Transcription

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Preliminary Technical Information High Voltage Power MOSFET IXTF02N450 VDSS I D25 RDS(on) = 4500V = 200mA  625 (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 200 mA 600 mA TC = 25C 78 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. 50/60Hz, 1 Minute 4500 V~ 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max.
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