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IXST45N120B - High Voltage IGBT

Download the IXST45N120B datasheet PDF. This datasheet also covers the IXSH45N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Epitaxial Silicon drift region - fast switching - small tail current.
  • MOS gate turn-on for drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSH45N120B-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXST40N60B High Speed IGBT ETC
IXST15N120BD1 Improved SCSOA Capability IXYS Corporation
IXST30N60B High Speed IGBT IXYS Corporation
IXST30N60BD1 High Speed IGBT IXYS Corporation
IXST30N60C High Speed IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXST40N60B High Speed IGBT
IXST15N120B High Voltage IGBT
IXST24N60B High Speed IGBT
IXST24N60BD1 High Speed IGBT
IXST30N60B2D1 High Speed IGBT with Diode

Full PDF Text Transcription

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High Voltage IGBT IXSH 45N120B IXST 45N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 75 A = 1200 V = 3.0 V Preliminary data Symbol V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) tSC Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C (limited by leads) T C = 90°C TC = 25°C, 1 ms 75 45 180 VGE= 15 V, TJ = 125°C, RG = 5 W Clamped inductive load ICM = 90 @ 0.8 V CES TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W 10 V V V V A A A A ms PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight (TO-247) TO-247 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
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