Datasheet4U Logo Datasheet4U.com

IXST30N60B2D1 - High Speed IGBT with Diode

Features

  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXST30N60B High Speed IGBT IXYS Corporation
IXST30N60BD1 High Speed IGBT IXYS Corporation
IXST30N60C High Speed IGBT IXYS Corporation
IXST30N60CD1 Short Circuit SOA Capability IXYS Corporation
IXST35N120B IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXST15N120B High Voltage IGBT
IXST24N60B High Speed IGBT
IXST24N60BD1 High Speed IGBT
IXST40N60B High Speed IGBT
IXST45N120B High Voltage IGBT

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 10 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 30 28 90 ICM = 48 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ...
Published: |