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IXST40N60B - High Speed IGBT

Download the IXST40N60B datasheet PDF. This datasheet also covers the IXSH40N60B variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast Fall Time for switching speeds up to 50 kHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSH40N60B-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXST40N60B High Speed IGBT ETC
IXST15N120BD1 Improved SCSOA Capability IXYS Corporation
IXST30N60B High Speed IGBT IXYS Corporation
IXST30N60BD1 High Speed IGBT IXYS Corporation
IXST30N60C High Speed IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXST45N120B High Voltage IGBT
IXST15N120B High Voltage IGBT
IXST24N60B High Speed IGBT
IXST24N60BD1 High Speed IGBT
IXST30N60B2D1 High Speed IGBT with Diode

Full PDF Text Transcription

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High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ T JM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE= 15 V, VCE = 360 V, TJ = 125°C R G = 22 W, non repetitive TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 V V V V A A A A ms 280 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
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