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IXST15N120B - High Voltage IGBT

Download the IXST15N120B datasheet PDF. This datasheet also covers the IXSH15N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Blocking Voltage.
  • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses.
  • MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSH15N120B-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 30 15 60 V= GE 15 V, T J = 125°C, R G = 10 W Clamped inductive load I = 40 CM @ 0.8 VCES TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive 10 V V V V A A A A ms PC TC = 25°C T J TJM T stg Md Mounting torque (TO-247) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.
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