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IXSM20N60A - High Speed IGBT

Download the IXSM20N60A datasheet PDF. This datasheet also covers the IXSM20N60 variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • q International standard packages q Guaranteed Short Circuit SOA capability q Low V CE(sat) - for low on-state conduction losses q High current handling capability q MOS Gate turn-on - drive simplicity q Fast Fall Time for switching speeds up to 20 kHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSM20N60-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Not for new designs Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES V CGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH tSC (SCSOA) P C TJ TJM Tstg Md Weight g VGE= 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive T C = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V 40 A 20 A 80 A ICM = 40 A @ 0.8 VCES 10 µs 150 W -55 ... +150 °C 150 °C -55 .
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