Datasheet4U Logo Datasheet4U.com

IXSM25N100A - Low VCE(sat) IGBT

Download the IXSM25N100A datasheet PDF. This datasheet also covers the IXSM25N100 variant, as both devices belong to the same low vce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8.
  • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSM25N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXSM20N60 High Speed IGBT IXYS
IXSM20N60A High Speed IGBT IXYS
IXSH10N60B2D1 High-Speed IGBT IXYS
IXSH15N120B High-Voltage IGBT IXYS
IXSH16N60U1 IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSM25N100 Low VCE(sat) IGBT
IXSM30N60 Low VCE(sat) IGBT
IXSM30N60A Low VCE(sat) IGBT
IXSM40N60 Low VCE(sat) IGBT
IXSM40N60A Low VCE(sat) IGBT

Full PDF Text Transcription

Click to expand full text
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Capability www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 33 Ω, non repetitive T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...
Published: |