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IXGT2N250 - High Voltage IGBT

Download the IXGT2N250 datasheet PDF. This datasheet also covers the IXGH2N250 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC110, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 2500 V 3.0 5.5 V TJ = 125°C 10 μA 100 μA ±100 nA TJ = 125°C 2.6 3.1 V 3.1 V Advantages z High Power Density z Low Gate Drive Re.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH2N250-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V TO-247 (IXGH) Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 50Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 5.5 A 2.0 A 13.5 A ICM = 6 A VCE ≤ 2000 V 32 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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