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IXGN320N60A3 - 600V IGBT

Features

  • Optimized for Low Conduction Losses.
  • High Avalanche Capability.
  • Isolation Voltage 3000 V~.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBT IXGN320N60A3 Ultra-Low-Vsat PT IGBT for up to 5kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Chip Capability) TTeC rm= i1n1a0l CCurrent Limit TC = 25C, 1ms VGE= 15V, TVJ = 125C, RG = 1 Clamped Inductive Load TC = 25C 50/60Hz t = 1min IISOL 1mA t = 1s Mounting Torque Terminal Connection Torque (M4) E Maximum Ratings 600 V 600 V ±20 V ±30 V 320 170 200 1200 A A A A ICM = 320 @0.8 • VCES 735 A W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.
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