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IXGN120N60A3 - IGBT

Features

  • Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Advantages High Power Density Low Gate Drive Requirement.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGN120N60A3D1 IGBT
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Full PDF Text Transcription

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GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 Ultra-low Vsat PT IGBTs for up to 5kHz switching Symbol VCES VCGR VGES VGEM IC25 IC110 I F110 I CM SSOA (RBSOA) PC TJ T JM T stg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms IXGN120N60A3D1 VGE= 15V, TVJ = 125°C, RG = 1.5Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) 60A3 E 60A3D1 Maximum Ratings 600 V 600 V ±20 V ±30 V 200 A 120 A 36 A 800 A ICM = 200 @ VCES < 600 595 A V W -55 ... +150 150 -55 ... +150 2500 3000 °C °C °C V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.
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