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IXGN200N60 - HiPerFAST IGBT

Features

  • International standard package miniBLOC (ISOTOP compatible) Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH) - easy to drive and to protect q q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGN200N60A HiPerFAST IGBT
IXGN200N60B IGBT
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Full PDF Text Transcription

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HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES 600 V 600 V IC25 200 A 200 A VCE(sat) 2.5 V 2.7 V E www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 200 100 300 ICM = 100 @ 0.8 VCES 600 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C V~ V~ SOT-227B, miniBLOC E G VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter 50/60 Hz IISOL £ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.
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