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IXGN50N60BD2 - HiPerFAST IGBT

Features

  • International standard package miniBLOC.
  • Aluminium nitride isolation - high power dissipation.
  • Isolation voltage 3000 V~.
  • Very high current, fast switching IGBT & FRED diode.
  • MOS Gate turn-on - drive simplicity.
  • Low collector-to-case capacitance.
  • Low package inductance (< 10 nH) - easy to drive and to protect.
  • Molding epoxies meet UL 94 V-0 flammability classification.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGN50N60BD3 HiPerFAST IGBT
IXGN50N60B HiPerFASTTM IGBT
IXGN200N60 HiPerFAST IGBT
IXGN200N60A HiPerFAST IGBT
IXGN200N60B IGBT

Full PDF Text Transcription

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HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.5 V = 150 ns ...BD2 www.DataSheet4U.com Symbol ...BD3 Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 600 60 600 150 -40 ... +150 150 -40 ...
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