Datasheet4U Logo Datasheet4U.com

IXGH24N170AH1 - High Voltage IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH24N170 High Voltage IGBT IXYS Corporation
IXGH24N120C3 GenX3 1200V IGBT IXYS Corporation
IXGH24N50B HiPerFAST IGBT IXYS Corporation
IXGH24N60A HiPerFAST IGBT IXYS Corporation
IXGH24N60AU1 HiPerFAST IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH24N170A High Voltage IGBT
IXGH24N120C3H1 High speed PT IGBT
IXGH20N100 IGBT
IXGH20N120B High Voltage IGBT
IXGH20N140C3H1 GenX3 1400V IGBTs

Full PDF Text Transcription

Click to expand full text
High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 1700 ± 20 ± 30 V V V V TTCC = 25°C = 90°C TC = 25°C, 1ms 24 16 75 VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω 0.I8CM• = 50 VCES TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 TC = 25°C 250 -55 ... +150 150 -55 ... +150 A A A A V μs W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Published: |