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IXGH20N120B - High Voltage IGBT

Download the IXGH20N120B datasheet PDF. This datasheet also covers the IXGT20N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z z z VCE = VCES VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGT20N120B_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXGH20N120 IGBT IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH20N100 IGBT
IXGH20N140C3H1 GenX3 1400V IGBTs
IXGH24N120C3H1 High speed PT IGBT
IXGH24N170A High Voltage IGBT
IXGH24N170AH1 High Voltage IGBT

Full PDF Text Transcription

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High Voltage IGBT Preliminary Data Sheet IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 80 ICM = 80 @ 0.8 VCES 190 -55 ... +150 www.DataSheet.co.kr V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, 150 300 260 C = Collector, TAB = Collector -55 ... +150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.
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