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IXGH20N140C3H1 - GenX3 1400V IGBTs

Download the IXGH20N140C3H1 datasheet PDF. This datasheet also covers the IXGT20N140C3H1 variant, as both devices belong to the same genx3 1400v igbts family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C, Note 1 VCE = 0V, VGE = ±20V IC = IC100, VGE = 15V, Note 1 TJ = 125°C VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 3.0 5.0 100 2.0 ±100 4.0 3.5 5.0 V μA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGT20N140C3H1_IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH20N100 IGBT
IXGH20N120B High Voltage IGBT
IXGH24N120C3H1 High speed PT IGBT
IXGH24N170A High Voltage IGBT
IXGH24N170AH1 High Voltage IGBT

Full PDF Text Transcription

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Advance Technical Information GenX3TM 1400V IGBTs w/ Diode High-Speed PT IGBTs for 20 - 50 kHz Switching IXGH20N140C3H1 IXGT20N140C3H1 VCES = IC100 = VCE(sat) ≤ tfi(typ) = TO-247 (IXGH) 1400V 20A 5.0V 32ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1400 1400 ±20 ±30 42 20 108 20 400 ICM = 40 VCE ≤ VCES 250 www.DataSheet.co.kr V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. g g G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector -55 ... +150 150 -55 ... +150 1.
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