Datasheet4U Logo Datasheet4U.com

IXGH24N60AU1 - HiPerFAST IGBT

Features

  • International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 2.7 V V µA mA nA V BV CE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH24N120C3H1 High speed PT IGBT IXYS
IXGH24N170A High Voltage IGBT IXYS
IXGH24N170AH1 High Voltage IGBT IXYS
IXGH20N100 IGBT IXYS
IXGH20N120B High Voltage IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH24N60AU1S HiPerFAST IGBT
IXGH24N60A HiPerFAST IGBT
IXGH24N60B HiPerFAST IGBT
IXGH24N60BU1 HiPerFAST IGBT
IXGH24N60C HiPerFAST IGBT

Full PDF Text Transcription

Click to expand full text
HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C l TO-247 SMD (24N60AU1S) G E C (TAB) TO-247 AD (24N60AU1) C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.
Published: |